| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422753 | Surface Science | 2011 | 4 Pages |
Abstract
⺠Hafnium silicide is detected after a 700 °C anneal. ⺠Hafnium silicide formation at 700 °C is self limiting. ⺠Hafnium oxide decomposition requires the decomposition of the SiO2 interlayer. ⺠A temperature of 900 °C is required to decompose a 0.3 nm SiO2 interlayer.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. McDonnell, B. Brennan, P. Casey, G.J. Hughes,