Interplay between adsorbed C60 fullerenes and point defects on a Si(111)3Ã3-In reconstructed surface

Article ID	Journal	Published Year	Pages	File Type
5422771	Surface Science	2011	5 Pages	PDF

Abstract

âº Interplay between adsorbed C60 fullerenes and Si(111)3Ã3-In surface defects was detected. âº Substitutional Si-defects trap the fullerenes. âº Group of a few fullerenes can act as a trap for a mobile surface vacancy. âº Vacancy migration was detected using STM video observations. âº Pathways and energetics of vacancy motion were examined using DFT calculations.

Keywords

Fullerence Indium Atom–solid interactions surface structure silicon Scanning tunneling microscopy (STM)

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

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Interplay between adsorbed C60 fullerenes and point defects on a Si(111)3Ã3-In reconstructed surface

Authors

D.V. Gruznev, A.V. Matetskiy, A.V. Zotov, A.A. Saranin, J.P. Chou, C.M. Wei, Y.L. Wang,