| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422789 | Surface Science | 2012 | 6 Pages |
Abstract
⺠Graphene was grown on thin Ir(111) films supported on YSZ-buffered Si(111) wafers. ⺠The Ir(111) films were single crystalline, the mosaic spread was below 0.2°. ⺠The Ir(111) films were thermally stable up to 1100 °C. ⺠Lattice-aligned graphene was grown by low pressure CVD of ethylene at 800 °C. ⺠At 700 °C and higher pressure rotated graphene phases were observed by STM.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Patrick Zeller, Sebastian Dänhardt, Stefan Gsell, Matthias Schreck, Joost Wintterlin,