Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Article ID	Journal	Published Year	Pages	File Type
5422823	Surface Science	2012	7 Pages	PDF

Abstract

âº Growth of a stoichiometric and As-free GaN ultrathin film on a GaAs(001) substrate. âº Use of a low power glow discharge nitrogen plasma source. âº Crystallization in c-GaN by annealing at 620Â Â°C. âº Passivation effect of the GaN ultra-thin film for the protection of GaAs surfaces.

Keywords

AFM Tem XPS Cubic GaN Nitridation GaAs

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

Preview

Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

Authors

G. Monier, L. Bideux, C. Robert-Goumet, B. Gruzza, M. Petit, J.L. Lábár, M. Menyhárd,