| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422855 | Surface Science | 2012 | 5 Pages |
Abstract
⺠We model 3C-SiC growth on hexagonal polytypes through Monte Carlo simulations. ⺠Proper surface pre-growth treatments are the key to grow high quality films. ⺠Large miscut angles (~ 8°) can enlarge the 3C-growth process window. ⺠We find that the 6H substrates are superior to the 4H ones.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Massimo Camarda,