Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5422875 | Surface Science | 2011 | 5 Pages |
Abstract
We perform spatial point analysis of InAs quantum dot (QD) nucleation sites and surface reconstruction domain patterns on an InAs wetting layer to investigate QD nucleation mechanisms in Stranski-Krastanow growth mode. An InAs wetting layer on a GaAs(001) substrate has been observed at 300 °C by using in situ scanning tunneling microscopy (STM) preceding QD formation. A nearest-neighbor analysis of the STM images finds that the point pattern of QD precursors is similar to that of (1 Ã 3)/(2 Ã 3) surface reconstruction domains which are specific to Ga-rich fluctuation. This provides the evidence that InAs QD nucleation is induced by Ga-rich fluctuation within an InAs wetting layer, as a technical implication for site-controlled QD growth for various QD devices.
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Authors
Tomoya Konishi, Shiro Tsukamoto,