| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422928 | Surface Science | 2011 | 5 Pages |
Abstract
⺠Angle-resolved inverse photoemission is performed on hydrogen-etched 6H-SiC(0001). ⺠Etching leads to silicate adlayer on SiC surface. ⺠No unoccupied Mott-Hubbard surface state observed after flashing samples. ⺠Saturation of dangling bonds by hydroxyl groups more likely than by hydrogen atoms.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Nabi Aghdassi, Ralf Ostendorf, Peter Krüger, Helmut Zacharias,