| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422936 | Surface Science | 2011 | 6 Pages |
Abstract
⺠Step bunching and step rotation are observed in Si/Si(110)-16 Ã 2 homoepitaxy. ⺠Step pattern may be tuned by choosing the direction of the electric current. ⺠Polarity of the applied electrical field has almost no effect the step motion. ⺠Imperfect matching of the (16 Ã 2) reconstruction domains induces step bunching.
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Authors
Arnold Alguno, Sergey N. Filimonov, Maki Suemitsu,