| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422977 | Surface Science | 2012 | 6 Pages |
Abstract
⺠Used scanning tunneling microscopy to study steps on GaAs(110) surface. ⺠Determined structure of As-edge steps on GaAs(110) surface. ⺠Determined spectrum of electronic states of As-edge steps on GaAs(110) surface. ⺠Found states of As-edge steps that extend into the GaAs band gap. ⺠Observed compensating defects (that minimize charge) at As-edge steps.
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Authors
S. Gaan, R.M. Feenstra, Ph. Ebert, R.E. Dunin-Borkowski, J. Walker, E. Towe,