| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5423111 | Surface Science | 2011 | 7 Pages |
Abstract
⺠Scanning tunneling microscopy follows Bi growth on Ge(111). ⺠Up to 1.5 monolayer Bi coverage, as-deposited at 300 K or annealed at 450 K. ⺠2D island formation and 3D growth onset. ⺠Semiconducting character of laterally isolated Bi islands just one atom thick. ⺠Metallic character of laterally continuous disordered Bi monolayer.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Goriachko, P.V. Melnik, A. Shchyrba, S.P. Kulyk, M.G. Nakhodkin,