| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5423112 | Surface Science | 2011 | 6 Pages |
Abstract
⺠We are reporting the Molecular Beam Passivation of GaAs(001) using in situ H2S. ⺠An in situ deposited Al2O3 layer has been used as high-κ dielectric. ⺠We showed that in situ H2S surface treatment leads to a stable oxide/III-V interface. ⺠The passivation comes from the improved structural properties of the GaAs surface.
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Authors
C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, G. Brammertz, M. Scarrozza, G. Pourtois, J. Kwo, M. Hong, J. Dekoster, M. Meuris, M. Heyns, M. Caymax,