Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5423133 | Surface Science | 2010 | 7 Pages |
Abstract
We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containing GaN(0001)2 Ã 2 reconstruction was successfully achieved on both HVPE and LPE surfaces by etching in HF and subsequent annealing at â¼Â 550 °C but was not achieved by etching in HCl, NaOH, and HNO3.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Azusa N. Hattori, Fumio Kawamura, Masashi Yoshimura, Yasuo Kitaoka, Yusuke Mori, Ken Hattori, Hiroshi Daimon, Katsuyoshi Endo,