| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5423188 | Surface Science | 2012 | 5 Pages |
Abstract
⺠We epitaxially grow Ge layers on (100), (111)Ga and (111)As surfaces of GaAs substrates. ⺠We evidence the role of arsenic as both dopant and surfactant. ⺠Substrates oriented in different direction can induce different growth modes. ⺠With Raman scattering we evidence that Ge phonon band position is shifted with respect to bulk Ge.
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Authors
G. Attolini, M. Bosi, M. Calicchio, O. Martinez, V. Hortelano,