| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5423190 | Surface Science | 2012 | 5 Pages |
Abstract
⺠Experimental AL of photoelectrons traveling in compact and microporous SiO2 films. ⺠AL are 15-22 nm for compact SiO2 and 23-32 nm for porous SiO2 films for electron energies 8.2-13.2 keV. ⺠An extrapolation of the TPP2M formula reproduces rather well the experimental observations.
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Authors
F.J. Ferrer, J. Gil-Rostra, L. González-GarcÃa, J. Rubio-Zuazo, P. Romero-Gómez, M.C. López-Santos, F. Yubero,