| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5423220 | Surface Science | 2011 | 7 Pages |
Abstract
⺠Barium deposited on thermal silicon oxide layer leads to interfacial reaction. ⺠Ba growth begins according to a layer-by-layer growth mode due to interfacial reaction. ⺠Reaction forms an interfacial silicate layer, a 2nd layer mainly composed of BaO while the rest of barium is metallic. ⺠Deposit annealing at mild temperature leads to silicate layers by consumption of silicon oxide. ⺠Subsequent annealing at 975 K can induce decomposition of barium silicate.
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Authors
T. Genevès, B. Domenichini, L. Imhoff, V. Potin, Z. Li, S. Bourgeois,