Article ID Journal Published Year Pages File Type
5423287 Surface Science 2011 5 Pages PDF
Abstract
► Fist report on Ga/Si(5 5 12) interfacial system. ► Ga induced nanowire formation on trenched Si(5 5 12) − 2 × 1 reconstructed surface. ► Role of Ga flux rate has been discussed. ► Room temperature Ga adsorption phase diagram has been drawn.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Ga-induced restructuring of Si(5 5 12) − 2 × 1 reconstructed surface at room temperature
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