Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5423336 | Surface Science | 2011 | 6 Pages |
Abstract
⺠Al(CH3)3 and TiCl4 pulses mimic the first half-cycle of atomic layer deposition. ⺠Both precursors removed the oxide left on GaAs(100) after aqueous HF treatment. ⺠Al(CH3)3 deposited an Al2O3 layer. ⺠TiCl4 deposited a small TiO2 coverage below 135 °C, but no TiO2 was deposited from 170-230 °C. ⺠The GaAs surface was passivated by Cl atoms bound to an elemental As overlayer.
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Physical and Theoretical Chemistry
Authors
Bernal Granados-Alpizar, Anthony J. Muscat,