Article ID Journal Published Year Pages File Type
5423349 Surface Science 2011 4 Pages PDF
Abstract
► We confirmed that In atoms favor to congregate inside a hole structure. ► We fabricated hole structures by applying voltage during As4 irradiation at 300 °C. ► With the In and As4 irradiations, the hole structures congregated In atoms. ► Growth rate inside the hole structure was higher than that on the WL region.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
In situ STM observation during InAs growth in nano holes at 300 °C
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