| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5423398 | Surface Science | 2012 | 4 Pages |
Abstract
⺠We study the growth of graphene by thermal decomposition of 3C-SiC/Si(100) surfaces. ⺠We analyse the surface graphitization as a function of the synthesis temperature. ⺠The carbon enrichment of the surface is characterized by a specific structuration. ⺠The graphitization induces a clear modulation of the surface potential.
Related Topics
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Physical and Theoretical Chemistry
Authors
N. Gogneau, A. Balan, M. Ridene, A. Shukla, A. Ouerghi,