| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5423535 | Surface Science | 2011 | 7 Pages |
Abstract
⺠We studied the silicon (111) surface during alkaline etching using X-ray diffraction. ⺠We prepared an atomically smooth surface using aqueous NH4F solutions free of oxygen. ⺠During etching we found the surface to be hydrogen terminated and not reconstructed. ⺠Two water layers on top of the silicon surface showed partial liquid ordering. ⺠We recorded in situ the formation of a surface oxide layer during anodic passivation.
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Authors
I.A. Shah, Q.D. Nguyen, H.G.G. Philipsen, B.M.A. van der Wolf, R.G. Algra, P. Tinnemans, A.J. Koekkoek, N. Panina, F.J.M. van den Bruele, W.J.P. van Enckevort, E. Vlieg,