Tin-stabilized (1Â ÃÂ 2) and (1Â ÃÂ 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

Article ID	Journal	Published Year	Pages	File Type
5423564	Surface Science	2011	6 Pages	PDF

Abstract

âº We elucidate the atomic structure of Sn-stabilized GaAs/InAs(100)(1Ã2)/(1Ã4) surfaces. âº SnGa- and SnAs-dimer models were found to be energetically favorable for GaAs(100). âº For InAs(100), only SnIn-model is energetically favorable at 0 K. âº STM- and photoemission measurements support the presence of SnIII-structures.

Keywords

Surface reconstruction Single crystal surfaces Synchrotron radiation photoelectron spectroscopy Ab initio calculations

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

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Tin-stabilized (1Â ÃÂ 2) and (1Â ÃÂ 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

Authors

J.J.K. LÃ¥ng, P. Laukkanen, M.P.J. Punkkinen, M. Ahola-Tuomi, M. Kuzmin, V. Tuominen, J. Dahl, M. Tuominen, R.E. Perälä, K. Schulte, J. Adell, J. Sadowski, J. Kanski, M. Guina, M. Pessa, K. Kokko, B. Johansson, L. Vitos, I.J. Väyrynen,