Article ID Journal Published Year Pages File Type
5423578 Surface Science 2011 5 Pages PDF
Abstract
► A clear epitaxial relationship of In2O3(111)||MgO(100) has been proposed. ► A four-domain structure has been found inside the In2O3 epitaxial film. ► A theoretical model for the epitaxial growth mechanism has been proposed. ► The In2O3 film has an excellent optical transparency and a band gap of 3.76 eV.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate
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