Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5423585 | Surface Science | 2010 | 4 Pages |
Topmost-surface-sensitive Si-2p photoelectron spectra of a clean Si(1Â 0Â 0)-2Â ÃÂ 1 surface have been measured using Si-2p photoelectron Si-L23VV Auger coincidence spectroscopy (Si-2p-Si-L23VV PEACS). The escape depth of the PEACS electrons is estimated to be â¼1.2Â Ã . The results support the assignments of the Si up-atoms, the Si down-atoms, the Si 2nd-layer, and the Si bulk proposed in previous researches. The Si-2p component with a binding energy of â0.23Â eV relative to the bulk Si-2p3/2 peak, is shown to originate mainly from the topmost surface. Site selectivity of PEACS is indicated to be achieved to some degree by carefully selecting the kinetic energy of the Auger electrons. Since PEACS can be applied to any surface, the present study opens a new approach to identify PES components.