Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5423766 | Surface Science | 2009 | 4 Pages |
Abstract
We describe here an alternative approach to direct low-energy electron beam nanolithography process with no conventional deposition of any resist or self-assembled monolayer. The method is based on direct formation of ultrathin dielectric layer on electron irradiated surface, without generation of structural defects. High-quality electron-induced patterns with lateral resolutions of about 10Â nm are demonstrated on SiO2 surface.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Daniel Aronov, Gil Rosenman,