Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424036 | Surface Science | 2009 | 5 Pages |
Abstract
Ordered nanofacet structures on vicinal 6H-SiC(0 0 0 1) surfaces, consisting of pairs of a (0 0 0 1) basal plane and a (112¯n) facet, are investigated in terms of stable surface stacking of the (0 0 0 1) basal planes. The surface termination of S3 (or S3*), i.e., ABC (or A*C*B*), was suggested by a structural model based on quantized step-bunching, which typically gives a one-unit-cell bunched step configuration at the (112¯n) facet. Here, we evaluate the surface termination at basal planes covered with a layer of silicon oxynitride by means of quantitative low-energy electron diffraction (LEED) analysis combined with scanning tunneling microscopy (STM), and show the validity of the structural model proposed.
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Authors
Kenjiro Hayashi, Kouhei Morita, Seigi Mizuno, Hiroshi Tochihara, Satoru Tanaka,