Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424107 | Surface Science | 2009 | 7 Pages |
Abstract
Surface motion of a topological defect between p(2Ã2) and c(4Ã2) structures, a “kink”, across buckled Sn-Ge and Si-Ge dimers on Ge(0Â 0Â 1) surfaces was investigated using scanning tunneling microscopy. Energy thresholds of Ïâ electrons for flipping these dimers in the kink are obtained by analyzing the kink surface motion. Electronic states of these systems and energy barriers for flipping the dimers are examined by first-principles calculations for considering elementary processes of the electronically-excited flip motion of the dimers. We propose that the flip motion is caused by a resonant scattering of the Ïâ electrons with localized electronic states at the kink.
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Authors
Kota Tomatsu, Binghai Yan, Masamichi Yamada, Kan Nakatsuji, Gang Zhou, Wenhui Duan, Fumio Komori,