Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424144 | Surface Science | 2010 | 5 Pages |
Abstract
In view of understanding silicon incorporation in the δ doping process of GaAs (0 0 1), Si atoms have been deposited, under UHV, on a α(2 Ã 4) arsenic terminated substrate. In the low coverage regime, a transition to a less As rich (3 Ã 2) reconstructed Si-GaAs (0 0 1) surface was observed whose atomic structure has been investigated by grazing incidence X-ray diffraction performed in situ. Silicon is found to occupy not only a Ga substitutional site, precursor of a donor dopant but also to form nuclei for neutral clusters, on a template made by the (3 Ã 2) GaAs (0 0 1) reconstructed surface observed by Martrou et al. [Phys. Rev. B 72 (2005) 241307®]. The maximum surface concentration of donor-like silicon is estimated at 1.04 Ã 1014 cmâ2 (1/6th monolayer).
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, A. Coati, A. Ouerghi, B. Etienne,