Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424146 | Surface Science | 2010 | 4 Pages |
Abstract
Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D Ge layer move to Si step edges where stronger bonds with Si atoms are formed. Appropriate growth conditions can suppress or enhance the pit formation effect and consequently a new type of self-organized nanostructures can be formed.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jacek Brona, Vasily Cherepanov, Konstantin Romanyuk, Bert Voigtländer,