Spatial modulation of the Dirac gap in epitaxial graphene

We use scanning tunneling spectroscopy (STS) at low temperatures to investigate the local electronic structure of mono- and bilayer graphene grown epitaxially on SiC(0 0 0 1). Already for monolayer graphene, a gap opening is observed in the π-bands at the Dirac point. The gap size is spatially modulated with the (63×63)R30° periodicity of the interface structure. We ascribe this effect to a spatially dependent interface potential, which is imprinted into the graphene layer. For bilayer graphene the Dirac gap has a constant size, but a spatially localized mid-gap state is observed within. For both, gap state and π-bands the intensities are strongly modulated with the atomic periodicity of graphene.