Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424535 | Surface Science | 2008 | 5 Pages |
Abstract
We investigate the morphology of islands obtained by epitaxial growth of Ge on Si(0Â 0Â 1). During a low growth rate or during annealing and depending of the quench method, we observe the formation of a new type of superdomes, which exhibit additional {15Â 3Â 23} facets, an increase of their {0Â 0Â 1} and {1Â 0Â 5} facet area on their top and a smaller aspect ratio compared to known superdomes. This flat-top superdome shape results from the complex evolution of domes and superdomes: coalescence, intermixing and ripening. Dome or superdome coalescence which results in the newly observed shape appears as a dominant pathway towards dislocation nucleation for the investigated temperature range.
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Authors
M.-I. Richard, G. Chen, T.U. Schülli, G. Renaud, G. Bauer,