Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424574 | Surface Science | 2009 | 6 Pages |
Abstract
The Ga-adsorbed structure on Si(1Â 1Â 3) surface at low coverage has been studied by scanning tunneling microscopy (STM). The bright protrusion corresponding to the position of the dimer without the interstitial Si atom of the clean surface disappeared in the filled-state STM image after Ga adsorption, although the protrusion due to the Si adatom still remained. On the basis of the adatom-dimer-interstitial (ADI) model, this result indicates that the Ga atom is adsorbed interstitially at the center of another pentamer that does not have the interstitial Si atom. An ab initio calculation was performed and STM images were simulated.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Katsumi Irokawa, Yuichiro Nagura, Hidekazu Kobayashi, Shinsuke Hara, Hiroki I. Fujishiro, Hirofumi Miki, Akira Kawazu, Kazuyuki Watanabe,