Reactive ion beam mixing of V/Si interfaces by low energy N2+ bombardment

The synthesis, composition and electronic structure of V-Si-N thin films grown by N2+ reactive ion beam mixing (IBM) of V/Si interfaces have been analysed using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and factor analysis. The IBM kinetics is characterized by two stages. In the first stage, the formation of VNx, along with a small Si incorporation in the near surface region are observed suggesting the formation of a VNx/SiNx nanocomposite film. In the second stage, the nanocomposite film is transformed into a (V-Si)N ternary nitride as a consequence of a higher Si incorporation in the near surface region.