Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424716 | Surface Science | 2008 | 6 Pages |
Abstract
Direct atomic-scale imaging using scanning tunnelling microscopy (STM) shows the formation of un-terminated single dangling bond (DB) on Si(0Â 0Â 1)-(2Â ÃÂ 1):H irradiated with low-energy electron beams below 13Â eV. The concentration of DB sites increases initially with excitation dose, followed by saturation at the levels that depend on the beam-current density. It is shown that re-termination of DBs with hydrogen, accelerated under electron irradiation, is responsible for the saturation. We conclude that re-terminating hydrogen is issued from bulk of Si. Quantitative analyses of the results determine the precise Si-H bond rupture cross section to be 1.3Â ÃÂ 10â20Â cm2, which is constant for electron energy from 2.6 to 12.6Â eV. Mechanism of Si-H bond rupture is discussed based on the results.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J. Kanasaki, K. Ichihashi, K. Tanimura,