Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424794 | Surface Science | 2007 | 5 Pages |
Abstract
Initial oxidation of HF-acid treated Si(1Â 0Â 0) surfaces with air exposure has been studied by using synchrotron radiation X-ray photoelectron spectroscopy. We demonstrate that the initial oxidation is explained not by a layer-by-layer process, but by a non-uniform mechanism. Just after dipping a Si substrate in HF-acid and spin-drying, the Si surface is immediately oxidized partly with a coverage of 0.2. It is considered that the non-uniform oxidation takes place at surface defects on H passivated Si surfaces. With increasing the air exposure up to 1 week, we have found that the non-oxidized part is oxidized uniformly at slower rates compared to the beginning. IR absorption spectroscopy with a multiple-internal-reflection geometry clearly indicates the backbond oxidation of surface Si takes place despite the H passivation produced by the HF-acid treatment.
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Authors
F. Hirose, M. Nagato, Y. Kinoshita, S. Nagase, Y. Narita, M. Suemitsu,