Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5424799 | Surface Science | 2007 | 5 Pages |
Abstract
The incorporations and migrations of the atomic oxygen in the topmost layer Si(1Â 0Â 0)-p(2Â ÃÂ 2) silicon surface, are investigated theoretically using density functional theory. We show that the diffusion is dependent on the starting and the final surrounding environment and does not simply consist in hops from one silicon-silicon bond to another. The activation energies range from 0.11Â eV to 2.59Â eV.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Hemeryck, N. Richard, A. Estève, M. Djafari Rouhani,