Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425014 | Surface Science | 2006 | 6 Pages |
Abstract
Sacrificial anodic oxidation is used to thin silicon wafer bonding substrates. Chemical solutions, sensitive to the periodic strain field present in the upper ultra-thin silicon layer, are employed for selective etching. Subsequent scanning tunnel microscopy observations reveal a square array of trenches corresponding to the buried screw dislocation network initially formed at the bonding interface. The influence of the initial thickness and the annealing of the ultra-thin film on roughness and trench depth of the nanopatterned substrates are examined. Germanium growth experiments are performed in order to show the self-organization character of resulting structured surfaces.
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Authors
D. Buttard, C. Krieg, A. Pascale, P. Gentile, F. Fournel,