Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425037 | Surface Science | 2007 | 6 Pages |
Abstract
Combining atomic force microscopy (AFM) and in situ grazing incidence X-ray diffraction (GIXD) we study the morphology and in-plane structure of diindenoperylene (DIP) on SiO2 in the early stages of the growth. We unravel noticeable strain relaxation phenomena in the in-plane structure during the growth of the first layers, concomitant with a transition from layer-by-layer growth to rapid roughening at a certain critical thickness of about five monolayers.
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Authors
X.N. Zhang, E. Barrena, D.G. de Oteyza, H. Dosch,