Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425047 | Surface Science | 2007 | 10 Pages |
Abstract
The development of contact potential difference (CPD) inhomogeneities on oxide-covered silicon samples was investigated by monitoring the CPD of a clean Si(0Â 0Â 1) 2Â ÃÂ 1 surface during exposure to molecular oxygen with Kelvin Probe Force Microscopy. A steady fluctuation level is reached within the completion of a monolayer of oxide. Non-continuous oxygen exposure at room temperature and at lower temperatures unequivocally demonstrates the coexistence of two oxidation processes. One of these processes involves a metastable precursor to oxygen dissociation.
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Physical and Theoretical Chemistry
Authors
J.M. Sturm, G.O. Croes, H. Wormeester, Bene Poelsema,