| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5425311 | Surface Science | 2007 | 5 Pages |
Abstract
The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.
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Authors
Hirokazu Fukidome, Kei Tanaka, Masamichi Yoshimura, Kazuyuki Ueda, Fang-Zhun Guo, Toyohiko Kinoshita, Keisuke Kobayashi,