Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425325 | Surface Science | 2007 | 6 Pages |
Abstract
We report on recent developments of an “at wavelength” full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5Â nm wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50Â nm and report on first results obtained from a six inches mask blank prototype as prerequisite for industrial usage.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J. Maul, J. Lin, A. Oelsner, D. Valdaitsev, N. Weber, M. Escher, M. Merkel, H. Seitz, U. Heinzmann, U. Kleineberg, G. Schönhense,