Multi-mode growth in Cu/Si(1 1 1) system: Magic nanoclustering, layer-by-layer epitaxy and nanowire formation

Using scanning tunneling microscopy and low energy electron diffraction, we have studied formation of the Cu/Si(1 1 1) interface. It has been found that depending on the growth conditions the various types of nanostructures can be formed. Room-temperature deposition of the Cu submonolayers onto the Si(1 1 1)7 × 7 surface results in formation of the ordered arrays of identical-size magic clusters. Room-temperature deposition of Cu onto the Si(1 1 1)5.55 × 5.55-Cu surface phase leads to developing arrays of Cu nanowires due to Cu accumulation at the atomic step edges. When Cu is deposited onto the Si(1 1 1)5.55 × 5.55-Cu surface held at 100 K, layer-by-layer growth of the epitaxial Cu(1 1 1) film takes place, after which it changes to the growth of 3D Cu islands having a shape of truncated pyramides.