Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425409 | Surface Science | 2007 | 5 Pages |
Abstract
Using scanning tunneling microscopy (STM) and time of flight secondary ion mass spectrometry (TOF/SIMS), we observed radiation effects on a Si(1 1 1)-(7 Ã 7) surface in the collision of a single highly charged ion (HCI) with a charge state q up to q = 50. The STM observation with atomic resolution revealed that a nanometer sized crater-like structure was created by a single HCI impact, where the size increased rapidly with q. The secondary ion yields also increased with q in which multiply charged Si ions (Sin+) were clearly observed in higher q HCI-collisions. The sputtering mechanism is briefly discussed, based on the so-called Coulomb explosion model.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Masahide Tona, Hirofumi Watanabe, Satoshi Takahashi, Nobuyuki Nakamura, Nobuo Yoshiyasu, Makoto Sakurai, Toshifumi Terui, Shinro Mashiko, Chikashi Yamada, Shunsuke Ohtani,