Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425579 | Surface Science | 2006 | 4 Pages |
Abstract
A surface preparation method with fine SiO2 particles in water is developed to flatten Si(0Â 0Â 1) surfaces on the nanometer scale. The flattening performance of Si(0Â 0Â 1) surfaces after the surface preparation method is investigated by scanning tunneling microscopy. The observed surface is so flat that 95% of the view area (100Â ÃÂ 100Â nm2) is composed of only three atomic layers, namely, one dominant layer occupying 50% of the entire area and two adjacent layers. Furthermore, a magnified image shows the outermost Si atoms regularly distributed along the ã1Â 1Â 0ã direction on terraces.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Kenta Arima, Akihisa Kubota, Hidekazu Mimura, Kouji Inagaki, Katsuyoshi Endo, Yuzo Mori, Kazuto Yamauchi,