Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425599 | Surface Science | 2006 | 6 Pages |
Abstract
We demonstrate a gradual surface modification process of relaxed Si0.5Ge0.5 alloy films by 100Â MeV Au beam with fluence varying between 5Â ÃÂ 1010 and 1Â ÃÂ 1012Â ions/cm2 at 80Â K by means of atomic force microscopy (AFM). Presence of Ge quantum dots (QDs) was found in the virgin sample. The disappearance of the QDs were noticed when the samples were irradiated with a fluence of 5Â ÃÂ 1010Â ions/cm2. Craters were found developing at a fluence of 1Â ÃÂ 1011Â ions/cm2. Apart from the evolution of the craters, blisters were also detected at a fluence of 1Â ÃÂ 1012Â ions/cm2. Variation of the average root mean square value of the surface roughness as a function of fluence was examined.
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Authors
A. Kanjilal, J. Lundsgaard Hansen, A. Nylandsted Larsen, D. Kanjilal,