Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425627 | Surface Science | 2007 | 4 Pages |
Abstract
We report on the structural, magnetic and electronic transport properties of thin MnxGe1âx films grown at 350 °C. Isolated Mn5Ge3 nanoclusters, about 100 nm in size, were formed at the top surface of the film, dominating the magnetic properties of the whole film. Electronic transport properties show Mn doping effect indicating the presence of substitutional Mn ions dispersed in the Ge host, contributing to the formation of a MnxGe1âx diluted phase. Electrical behaviour indicates a saturation effect with the raise of the nominal Mn concentration in the film, above x â  0.03.
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Authors
L. Morresi, J.P. Ayoub, N. Pinto, M. Ficcadenti, R. Murri, A. Ronda, I. Berbezier, F. D'Orazio, F. Lucari,