| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5425655 | Surface Science | 2007 | 4 Pages |
Abstract
This study describes the origin of the size and shape anisotropy of InAs/InP(0Â 0Â 1) quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE). The geometry of the QDs is determined by carefully analyzing transmission electron microscopy (TEM) images. An analytical model adapted to our QD geometry is used to understand the formation mechanism of the QDs, and to describe the origin of their size dispersion. A shape transition from QDs to elongated quantum sticks (QS) is observed under As-poor growth conditions. This transition, driven by thermodynamics, is clearly described by our model.
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Authors
G. Saint-Girons, A. Michon, I. Sagnes, G. Beaudoin, G. Patriarche,