Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425666 | Surface Science | 2007 | 4 Pages |
Abstract
We report an X-ray photoemission and electron energy loss study on 3Â keV N2+ ion implantation in single wall carbon nanotubes. Our results show that nitrogen atoms can bind to carbon in tetrahedral sp3, defects related pyridine-like, and triangular sp2 configurations and such bondings are stable for annealing up to 650Â K. Heating at higher temperatures results in preferential substitutional nitrogen doping. This technique opens a new channel for controlled doping in carbon nanotubes for device applications.
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Authors
F. Xu, M. Minniti, C. Giallombardo, A. Cupolillo, P. Barone, A. Oliva, L. Papagno,