| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5425671 | Surface Science | 2007 | 5 Pages |
In this communication we report a novel, technologically promising procedure able to graft alkynes onto Si(1Â 0Â 0) through the formation of direct Si-C bond. It results in the formation of grafted layers as FTIR measurements demonstrates. The advantages of this procedure compared to other available routes are that chemicals used are relatively harmless compared to those used in other wet chemical procedures; and that no surface pre-activation is required, the overall process being surface preserving, i.e. leading to no increase of surface roughness. Furthermore, the reaction mechanism guarantees full stereoselectivity. Therefore, gas sensors built using such a procedure are expected to show higher reliability and more stable electrical behavior.
