Surface reactions and kinetically-driven patterning scheme for selective deposition of Si and Ge nanoparticle arrays on HfO2

We demonstrate a kinetically-driven patterning scheme to selectively position arrays of Ge or Si nanoparticles within lithographically defined HfO2 windows. The surface reactions enabling patterning are revealed through temperature programmed desorption experiments and selectivity of the deposition is verified by X-ray photoelectron spectroscopy and scanning electron microscopy. Patterning is possible by exploiting the different reactivity of Ge and Si on HfO2 and SiO2 surfaces and employing a sacrificial SiO2 mask on which adatoms etch the SiO2 surface and do not accumulate to form nanocrystals.