Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5425893 | Surface Science | 2006 | 4 Pages |
Abstract
We have analyzed electron tunneling due to the electric field from a hydrogen-terminated Si(1Â 0Â 0)2Â ÃÂ 1 ultrathin film on a metal substrate by density functional transport calculations. We have obtained a hysteresis loop in the tunneling current, which comes from the existence of two electronic structures. Furthermore, we have clarified that, as a condition of bistable electron transport, a double-barrier potential structure is not necessarily required for zero field, because it can be induced by the electric field.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Y. Gohda, S. Watanabe,